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Probe Card
Probe Station
Tester
LED Light
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Probe Card

Vertical Probe Card
(Mobile D-RAM, L.D.I Flip Chip 60um Pitch,
System LSI, Soc Devices)
Cantilever Probe Card
Low Leakage Probe Card

Probe card Spider for Low leakage probe card

Low leakage Probe card Specification
  • Needle Materials : W. Coaxial or Ni Alloy
  • Tip shape : Round
  • Alignment accuracy : ± 4um
  • Planarity :< 8um
  • Leakage Current 10V F : <500 fA. <300fA (Coaxial needles)
  • Contact resistance : <3Ω
  • Tip Length : 250 ± 20 um
  • Operating Temp, range : -40℃ ~ 150 ℃
  • Life time : Over 1M times T/D
  • Voltage (max adjacent tip) : 150VDC
  • Max Current : 500mA
  • Min, pad Pitch (Both side Fan-out) : 30um/ Single side : 60um
  • Min, pad Pitch (Both side Fan-out) : 60um ( Coaxial needles)
  • Min, pad Pitch (Both side Fan-out) : 120um ( Coaxial needles)
Cantilever Specification
  • Needle Materials : W, Re-W, BeCu, P7, Pt
  • Confront Various type of device for Non Memory Devices
  • High Pin Count, Available fine pitch - High Pin Count :
    Over 1~ 15,000Pins./60um Pitch
  • Tip Diameter : 8 ~ 30um (Variable for customer spec,)
  • Planarity : less than 15um (depends on Device size)
  • Contact resistance : < 4 Ohm
D.D.I (L.D.I.) Specification
  • Needle Materials : BeCu or Ni-Alloy
  • Min, Pad pitch In- line : 20um
  • Min, Pad pitch Quad- tier : 35um
  • Min, Pad Size (um) : 20x71um
  • Operating temperature range ( ℃ ) : ­40℃ ~ 150℃
  • Max test frequency (MHz) : Over 200Mhz
  • Leakage level (nA) : <10nA
  • Contact resistance (Ohm) : <4Ω
Vertical-40 Specifications
  • Needle Material : Ni Alloy
  • Beam Diameter : 20um x 20um
  • Tip Diameter (Flat): 20um x 20um
  • Min. Pad to Pad Pitch : ≥ 40um
  • Alignment (X, Y) : ±4um
  • Planarity : <12um
  • Needle Force : Force @ 70um 2.9 g(Depend on user spec)
  • Scrub Mark : ≤ 20um
  • Recommended OD : 70um (Max 90um)
  • Contact Resistance : ≤ 4Ω (Wired)
  • Max Current : 450mA
  • Leakage Current : ≤ 10nA / 5V
  • Test Frequency(Probes) : ≤ 10nA / 5V
  • Test Temperature : -40℃ ~ 150℃
  • Parallelism : System LSI. SoC : Over 2Para
    Memory : x32. X64. x128
  • Applications : LSI-Logic(SOC Flip chip). CIS, Memories Area Array, Inline, Peripheral Bump pad(Au, Solder), Al pad
MEMS Probe card Specification
  • Needle Material : Ni Alloy
  • Tip shape : Round
  • Available Minimum pad Pitch : >60um
  • DUT Parallel : System LSI . SoC, over 2 Para Nand Flash 300mm One touch down
  • Test Speed rate : >70Mhz
  • Voltage (max adjacent tip) : 150VDC
  • Max Current (recommended) : 1A
  • Vickers Hardness (Kg/㎟) : 500 ~ 550
  • Gram Force (g/mil) : 2.5g (Standard). Adjustable by customer needs.
  • Alignment accuracy : ±4um
  • Planarity : < 19um (12inch)
  • Tip Length : 250 ± 20 um
  • Leakage Current (nA) / GND.PWR : 10 / 50 nA
  • Operating Temp, range : -40℃ ~ 150 ℃
  • Maximum over drive : 100um